our services

Qudos offers a wide range of services that meet the demanding specifications of the semiconductor, photonics and Micro Electro Mechanical Systems (MEMS) industries.

Deposition

Our processing capabilities make it possible for us to deposit a wide variety of materials in single or multiple layers. We also have substantial experience in depositing sub-micron layers on a wide range of devices, including bio-sensors, displays, T-gates and optical devices.

Metal Deposition

Qudos run two methods of metal deposition: Sputtering and Evaporation.

Sputtering

Sputtering is our main technique for which we have three DC magnetron machines whilst evaporation is done using an e-beam source and is suitable for heat sensitive substrates for and lift-off processing.

We are able to anneal substrates (if temperature limits allow) to reduce film stress, improve diffusion of alloys and improve metal adhesion to substrate. Our inert atmosphere facility prevents any contaminants being introduced onto the film surface.

The metals we most commonly use are Chrome, Aluminium, Aluminium/1% Silicon, Titanium/Tungsten, Titanium, Tantalum, Tin, Indium, Silver, Gold and Copper.

Our machines are setup to run 4 and 6 inch wafers, but are also capable of running part pieces and smaller diameter wafers as well as rectangular substrates. The Oxford 400 system is load locked to increase wafer throughput and minimize particle contamination, whilst also providing excellent uniformity.

Evaporation

Thin FilmsWe offer a metal evaporation facility for depositing a wide range of metals. The evaporation method is also used for processes that require metal lift-off in preference to metal deposition. We use an E-Gun, a high energy system for evaporation of high melting point materials.

PECVD Deposition

We have Plasma Enhanced Chemical Vapour Deposition (PECVD) for Silicon Oxide, Silicon Nitride and Silicon Oxy-nitride deposition onto various substrates that are not temperature sensitive. We use an MRL Furnace to grow thermal oxide on 4 -8 inch silicon wafers via wet and dry processes.

Film thicknesses can be in the range of a few hundred angstroms to several microns, with uniformity typically better than 5% over a 6 inch wafer.

We are able to handle a range of substrate sizes and shapes, from part wafers up to 6 inch wafers / 6 inch square substrates.

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