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Inspection and Metrology

We offer :

Equipment	Service	Resolution
OSI	Line width measurment, semi-automatic	<0.5µm
Tencor P2	Profile measurement, semi-automatic	10nm
Nanometrics 210	resist thickness measurement by interferometry	10nm
Leica S200	Scanning Electron Microscope (SEM)	100nm
Hitachi S4000	SEM with field emission gun and metrology	<30nm
EBL-40	E-beam metrology and SEM system	<50nm
Zygo	3D Optical profiler	10nm
AFM	Scanning probe microscope	10nm
Raman Microscope	Coming soon.....

SEM
Images are produced by scanning a focused electron beam across the surface of a specimen. In the most common mode, the low energy secondary electrons emitted are detected and used to modulate the brightness of a synchronously scanned CRT. Other signals can also be detected. X-rays, characteristic of that part of the specimen probed by the electron beam, allow both a qualitative and quantitative determination of the elements present in the selected region. High energy backscattered electrons can be separated and used for image formation. Since the backscattering efficiency is a function of atomic weight, this image reveals compositional variations due to average atomic number.

Information Obtained
° Surface topography if low energy secondary electrons are collected
° Atomic number or orientation information if higher energy backscattered electrons are used for imaging
° Differentiation between surface roughness, porosity, granular deposits, stress-related gross microcracks (often used in conjunction with microsectioning)
° Observation of grain boundaries in unetched samples
° Critical dimension measurements