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Deposition

As part of our processing capabilities we can deposit a wide variety of metals in single or multiple layers. These layers have typical thickness of up to 1micron, although thicker layers can be deposited The limiting factors are film stress, adhesion and feature size. We also have substantial experience in depositing sub-micron layers for a wide range of devices, including bio-sensors, displays, t-gates and optical devices.

For all metals that we deposit, we are able to anneal the substrates (if temperature limits allow) to reduce film stress, improve diffusion of alloys and improve metal adhesion to substrate. This process is carried out under an inert atmosphere to prevent any contaminants being introduced to the film surface.

There are two methods we employ for metal deposition, these are: Sputtering and Evaporation. Sputtering is our main technique for which we have three tools, two magnetrons and one RF sputtering tool. The evaporation is done using an e-beam source and is suitable for heat sensitive substrates and lift-off processing.

We also offer a service of PECVD deposition for Oxide, Nitride and Oxynitride.

A Thermal Oxide deposition service to grow thermal oxide via wet and dry processes on silicon wafers is also offered. The System can handle from 4 inch to 8 inch wafers.

An LPCD furnace is also currently being installed in the fab which will be available for a range of oxide and nitride depositions.