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E-Beam Lithography

Our E-Beam technology is based on a Leica Cambridge VB6 Vector Beam & EBL300. We process advanced direct write products and provide a mask & reticle making service. The EBL300 is used for masks & direct-write on wafer applications. The VB6, operating at 100kV, is concentrated on nanolithography with ultra high resolution from 20nm up to 200µm.

We offer:

Direct Write
Masks and Reticles

Direct Write

We have extensive experience of Direct-Write for development & prototyping and production. We have set processes for various e-beam resists that currently provide resolution down to 20nm. We also specialise in development work using cutting-edge materials, as required.

Our capabilities include:

Cost-effective device development. The ability to combine high precision placement with high resolution patterns. We can "mix-and-match" e-beam lithography steps with optically defined patterns, whether customer defined or run on site.
A variety of materials and sizes. We have run the following wafer types: Si, GaAs, GaN, InP, GaPO, LiNiO, Dielectrics and Metals for substrates ranging from part-piece to 150mm.
A range of pattern sizes: < 50nm for R&D projects, 100 - 1000µm for micro-engineering applications.
Processing experience and capabilities to combine with direct write to offer a complete or part processing service as required by the customer.
Production of device wafers for a variety of applications

Masks:

The EBL300 operates at 50kV, allowing a spot size of less than 100nm. We produce masks with sizes 2.5" - 6" with critical dimensions of 0.5µm. We offer conventional mask fabrication with low defects for 1:1 aligners, or in conjunction with other requirements, provide 5x reticles for Stepper lithography. Click here for our mask page.